MTP36N06V |
RFQ for MTP36N06V Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MTP36N06V | - | TO-220 | 06+ |
Features |
| New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETS• Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Static Parameters are the Same for both TMOS V and TMOS EFET |
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±20 ±25 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
32 22.6 112 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
90 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL =32 Apk, L = 0.1 mH, RG = 25) |
EAS
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